神马作文网英语翻译As shown in Fig.9(a),for a control sample of p-type PbTe
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英语翻译
As shown in Fig.9(a),for a control sample of p-type PbTe doped with 1% Na2Te,the carrier mobility at room temperature is \x02350 cm2 V\x031 s\x031.The corresponding carrier mobility for a sample containing
1% (and 2%) SrTe is \x02340 cm2 V\x031 s\x031 (for the same carrier concentration of \x025.6 \x04 1019 cm\x033).The growth of
endotaxial SrTe nanocrystals in the PbTe matrix does not appear to affect the hole scattering.This is believed to occur by (1) endotaxial alignment of SrTe and PbTe with coherent/semicoherent
interfaces,and (2) the alignment of the energies of the valence bands in the two materials where the band offset is very small at >300 K.The favorable valence band top alignment of the PbTe and SrTe phases is also suggested by first-principles band calculations.As can be seen from Fig.9(b) the alignment
of the valence band top is favorable and indeed p-type Na doping in the PbTe–SrTe system does result in negligible reduction of the carrier mobility relative to pure PbTe.14
As shown in Fig.9(a),for a control sample of p-type PbTe doped with 1% Na2Te,the carrier mobility at room temperature is \x02350 cm2 V\x031 s\x031.The corresponding carrier mobility for a sample containing
1% (and 2%) SrTe is \x02340 cm2 V\x031 s\x031 (for the same carrier concentration of \x025.6 \x04 1019 cm\x033).The growth of
endotaxial SrTe nanocrystals in the PbTe matrix does not appear to affect the hole scattering.This is believed to occur by (1) endotaxial alignment of SrTe and PbTe with coherent/semicoherent
interfaces,and (2) the alignment of the energies of the valence bands in the two materials where the band offset is very small at >300 K.The favorable valence band top alignment of the PbTe and SrTe phases is also suggested by first-principles band calculations.As can be seen from Fig.9(b) the alignment
of the valence band top is favorable and indeed p-type Na doping in the PbTe–SrTe system does result in negligible reduction of the carrier mobility relative to pure PbTe.14
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如图9（a）中所示,对于一个用1%Na2Te掺杂的p型PbTe的对照样品来说,在室温下的载流子迁移率是350cm2V·1s1.对于含有1％（和2％）SrTe的样品来说,相应的载流子迁移率为340350cm2V·1s1（在5.61019cm3的相同的载流子浓度下）.在PbTe基体中内延 SrTe纳米晶体的生长似乎不影响空穴的分散.据信其发生是因为：（1）SrTe和PbTe与相干/半相干界面的内延对准,（2）两种材料（其中价带的带价在大于300K时很小）中价带的能量对准.PbTe和SrTe相良好的价带顶部的对准也由第一原理价带计算得到了启示.如从图9（b）中可以看出的那样,价带顶部的对准是良好的,并且,确实,在PbTe-SrTe系统中p型的Na掺杂确实导致了载流子迁移率相对于纯PbTe来说可以忽略不计的降低.14
如图9（a）中所示,对于一个用1%Na2Te掺杂的p型PbTe的对照样品来说,在室温下的载流子迁移率是350cm2V·1s1.对于含有1％（和2％）SrTe的样品来说,相应的载流子迁移率为340350cm2V·1s1（在5.61019cm3的相同的载流子浓度下）.在PbTe基体中内延 SrTe纳米晶体的生长似乎不影响空穴的分散.据信其发生是因为：（1）SrTe和PbTe与相干/半相干界面的内延对准,（2）两种材料（其中价带的带价在大于300K时很小）中价带的能量对准.PbTe和SrTe相良好的价带顶部的对准也由第一原理价带计算得到了启示.如从图9（b）中可以看出的那样,价带顶部的对准是良好的,并且,确实,在PbTe-SrTe系统中p型的Na掺杂确实导致了载流子迁移率相对于纯PbTe来说可以忽略不计的降低.14
英语翻译As shown in Fig.9(a),for a control sample of p-type PbTe
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