英语翻译Fig.8 (a) The small valence band offsets allow facile ho

英语翻译
Fig.8 (a) The small valence band offsets allow facile hole transmission through a nanostructured matrix with an endotaxially arranged second phase that simultaneously scatters heat carrying phonons at the matrix/nanostructure interface.(b) Relative energy band diagram for the combined nanostructured matrix showing the large differences in semiconducting band gap and the small energy difference,DE,in the valence band edges.
Fig.9 (a) Temperature dependence of carrier mobilities and lattice thermal conductivity for the PbTe–SrTe system doped with 1% Na2Te.The endotaxial nanostructured SrTe with small valence band offsets allows seamless hole transmission and simultaneously blocks heat carrying phonons at the matrix/nanostructure interface.(b) Schematic representation of the alignment of the valence band (VB) and conduction band (CB) energies of SrTe precipitates in the PbTe matrix.
Fig.12 Hole mobility at 923 K as a function of energy difference for the valence band maxima between metal sulfides and PbS.The minimizing significant deterioration of the hole mobility at high temperatures
indicates that the band energy offset between PbS and CdS decreases with rising temperature due to thermal band broadening

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图8（a）小的价带带价允许通过一个以内延方式（endotaxially）排列的第二相的纳米结构基体进行流畅的空穴传递,这同时驱散在基体/纳米结构界面处的载热声子.图8（b）为结合的纳米结构基体的相对的能带图,显示在半导体带隙中小的能量差别,以及在价带边缘中小的能量差,DE.
图9（a）以1%N2Te掺杂的PbTe-SrTe的载体迁移率和晶格热导率的温度依存性.该具有小价带带价的内延的纳米结构SrTe允许无缝的空穴传递,同时在基体、纳米结构界面处阻断载热声子.图9（b）在PbTe基体中SrTe沉淀物的价带（VB）和导带（CB）的能量对准的示意图.
图12 在923ķ下空穴的迁移率与金属硫化物和PbS之间价带最大值的能量差值的函数关系.在高温下的空穴迁移率的最小化的显著恶化表明,PbS和CdS的之间的带能由于热带展宽引起偏移量随温度升高而降低.